Bourns TVS DIODE /CDSOD323-T15C/SOD323/BOU CDSOD323-T15C Fiche De Données

■

 RoHS compliant*

■

  Protects one line or one I/O port

■

  Bidirectional confi guration

■

  ESD protection 30 kV max.

■

  Low capacitance: ~3 pF typical

■

  Replaces 0805 MLV devices

■

 Cellular phones

■

  PDAs and notebooks

■

 Digital cameras

■

  MP3 players and GPS

■

 USB interface

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. 

Specifi cations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their specifi c applications.

The markets of portable communications, computing and video equipment are 
challenging the semiconductor industry to develop increasingly smaller electronic 
components.

Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection 
applications, in SOD323 package size format. The Transient Voltage Supressor Array 
series offers a choice of voltage types ranging from 3 V to 24 V in a unidirectional or 
bidirectional confi guration. Bourns

®

 Chip Diodes conform to JEDEC standards, are 

easy to handle on standard pick and place equipment and their fl at confi guration 
minimizes roll away.

The Bourns

®

 device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 

61000-4-5 (Surge) requirements.  

Note:   For 12 V and 24 V VDSL applications, the CDSOD323-TxxC-DSL family of 
 

devices is recommended.

Peak Pulse Power (tp = 8/20 µs)

P

PP

350

W

Operating Temperature

T

J

-55 to +150

°C

Storage Temperature

T

STG

-55 to +150

°C

Notes:
1. 

Part numbers with suffi x “C” indicate bidirectional device, i.e. CDSOD323-T05C.

2.   For bidirectional devices only, the electrical specifi cations apply in both directions.

1

2

UNIDIRECTIONAL

1

2

BIDIRECTIONAL

Minimum Breakdown Voltage @ 1 mA

V

BR

4.0

6.0

8.5

13.3

V

Working Peak Voltage

V

WM

3.3

5.0

8.0

12.0

V

Maximum Clamping Voltage @ I

P 

= 1 A

V

C

7.0

9.8

13.4

19.0

V

Typical Clamping Voltage
@ 8/20 µs @ I

PP

V

C

19.0 V

@ 20 A

18.3 V

@ 17 A

18.5 V

@ 17 A

28.3 V

@ 11 A

V

Maximum Leakage Current @ V

WM

I

D

5

5

2

1

µA

Typical Capacitance @ 0 V, 1 MHz

C

J

3

pF

Minimum Breakdown Voltage @ 1 mA

V

BR

16.7

20.0

26.7

V

Working Peak Voltage

V

WM

15.0

18.0

24.0

V

Maximum Clamping Voltage @ I

P 

= 1 A

V

C

24.0

29.0

43.0

V

Typical Clamping Voltage
@ 8/20 µs @ I

PP

V

C

31.8 V

@ 10 A

45.0 V

@ 8 A

56.0 V

@ 6 A

V

Maximum Leakage Current @ V

WM

I

D

1

µA

Typical Capacitance @ 0 V, 1 MHz

C

J

3

pF