Microchip Technology AC160214 Fiche De Données
2010-2012 Microchip Technology Inc.
DS41414D-page 401
PIC16(L)F1946/47
30.5
Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
Operating temperature -40°C
T
A
+125°C
Param
No.
Sym.
Characteristic
Min.
Typ†
Max.
Units
Conditions
Program Memory
Programming Specifications
Programming Specifications
D110
V
IHH
Voltage on MCLR/V
PP
pin
8.0
—
9.0
V
(
Note 3, Note 4
)
D111
I
DDP
Supply Current during
Programming
Programming
—
—
10
mA
D112
V
PBE
V
DD
for Bulk Erase
2.7
—
V
DDMAX
V
D113
V
PEW
V
DD
for Write or Row Erase
V
DDMIN
—
V
DDMAX
V
D114
I
PPPGM
Current on MCLR/V
PP
during Erase/
Write
—
—
1.0
mA
D115
I
DDPGM
Current on V
DD
during Erase/Write
—
5.0
mA
Data EEPROM Memory
D116
E
D
Byte Endurance
100K
—
—
E/W
-40
C to +85C
D117
V
DRW
V
DD
for Read/Write
V
DDMIN
—
V
DDMAX
V
D118
T
DEW
Erase/Write Cycle Time
—
4.0
5.0
ms
D119
T
RETD
Characteristic Retention
—
40
—
Year -40°C to +55°C
Provided no other
specifications are violated
specifications are violated
D120
T
REF
Number of Total Erase/Write
Cycles before Refresh
Cycles before Refresh
(2)
1M
10M
—
E/W
-40°C to +85°C
Program Flash Memory
D121
E
P
Cell Endurance
10K
—
—
E/W
-40
C to +85C (
Note 1
)
D122
V
PRW
V
DD
for Read/Write
V
DDMIN
—
V
DDMAX
V
D123
T
IW
Self-timed Write Cycle Time
—
2
2.5
ms
D124
T
RETD
Characteristic Retention
—
40
—
Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
Self-write and Block Erase.
2:
Refer to
for a more detailed discussion on data EEPROM
endurance.
3:
Required only if single-supply programming is disabled.
4:
The MPLAB™ ICD 2 does not support variable V
PP
output. Circuitry to limit the MPLAB ICD 2 V
PP
voltage
must be placed between the MPLAB ICD 2 and target system when programming or debugging with the
MPLAB ICD 2.
MPLAB ICD 2.