Microchip Technology MCP1630DM-DDBS1 Fiche De Données
©
2007 Microchip Technology Inc.
DS41211D-page 119
PIC12F683
15.3
DC Characteristics: PIC12F683-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Operating temperature
-40°C
≤
T
A
≤
+85°C for industrial
Param
No.
Device Characteristics
Min
Typ†
Max
Units
Conditions
V
DD
Note
D020
Power-down Base
Current(I
Current(I
PD
)
(2)
—
0.05
1.2
μ
A
2.0
WDT, BOR, Comparators, V
REF
and
T1OSC disabled
—
0.15
1.5
μ
A
3.0
—
0.35
1.8
μ
A
5.0
—
150
500
nA
3.0
-40°C
≤
T
A
≤
+25°C
D021
—
1.0
2.2
μ
A
2.0
WDT Current
(1)
—
2.0
4.0
μ
A
3.0
—
3.0
7.0
μ
A
5.0
D022
—
42
60
μ
A
3.0
BOR Current
(1)
—
85
122
μ
A
5.0
D023
—
32
45
μ
A
2.0
Comparator Current
(1)
, both
comparators enabled
—
60
78
μ
A
3.0
—
120
160
μ
A
5.0
D024
—
30
36
μ
A
2.0
CV
REF
Current
(1)
(high range)
—
45
55
μ
A
3.0
—
75
95
μ
A
5.0
D025*
—
39
47
μ
A
2.0
CV
REF
Current
(1)
(low range)
—
59
72
μ
A
3.0
—
98
124
μ
A
5.0
D026
—
4.5
7.0
μ
A
2.0
T1OSC Current
(1)
, 32.768 kHz
—
5.0
8.0
μ
A
3.0
—
6.0
12
μ
A
5.0
D027
—
0.30
1.6
μ
A
3.0
A/D Current
(1)
, no conversion in
progress
—
0.36
1.9
μ
A
5.0
*
These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base I
DD
or I
PD
and the additional current consumed when this
peripheral is enabled. The peripheral
Δ
current can be determined by subtracting the base I
DD
or I
PD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD
.