STMicroelectronics M48Z12-150PC1 Memory IC M48Z12-150PC1 Fiche De Données

Codes de produits
M48Z12-150PC1
Page de 22
M48Z02, M48Z12
Operation modes
Doc ID 2420 Rev 9
2 Operation 
modes
The M48Z02/12 also has its own power-fail detect circuit. The control circuitry constantly 
monitors the single 5 V supply for an out of tolerance condition. When V
CC
 is out of 
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the 
midst of unpredictable system operation brought on by low V
CC
. As V
CC
 falls below 
approximately 3 V, the control circuitry connects the battery which maintains data operation 
until valid power returns.
Table 2.
Operating modes
Note:
X = V
IH
 or V
IL
; V
SO
 = battery backup switchover voltage.
2.1 READ 
mode
The M48Z02/12 is in the READ mode whenever W (WRITE enable) is high and E (chip 
enable) is low. The device architecture allows ripple-through access of data from eight of 
16,384 locations in the static storage array. Thus, the unique address specified by the 11 
Address Inputs defines which one of the 2,048 bytes of data is to be accessed. Valid data 
will be available at the data I/O pins within address access time (t
AVQV
) after the last 
address input signal is stable, providing that the E and G access times are also satisfied. If 
the E and G access times are not met, valid data will be available after the latter of the chip 
enable access time (t
ELQV
) or output enable access time (t
GLQV
).
The state of the eight three-state data I/O signals is controlled by E and G. If the outputs are 
activated before t
AVQV
, the data lines will be driven to an indeterminate state until t
AVQV
. If 
the address inputs are changed while E and G remain active, output data will remain valid 
for output data hold time (t
AXQX
) but will go indeterminate until the next address access.
Mode
V
CC
E
G
W
DQ0-
DQ7
Power
Deselect
4.75 to 5.5 V
or
4.5 to 5.5 V
V
IH
X
X
High Z
Standby
WRITE
V
IL
X
V
IL
D
IN
Active
READ
V
IL
V
IL
V
IH
D
OUT
Active
READ
V
IL
V
IH
V
IH
High Z
Active
Deselect
V
SO
 to V
PFD
(min)
(1)
1.
See 
 for details.
X
X
X
High Z
CMOS standby
Deselect
≤ V
SO
X
X
X
High Z
Battery backup mode