Freescale Semiconductor MPC830x PowerQUICC II Pro Processor Evaluation Kit MPC8309-KIT MPC8309-KIT Fiche De Données

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Freescale Semiconductor

 

This section describes the thermal specifications of the MPC8309. 

The following table provides the package thermal characteristics for the 369, 19 

× 19 mm MAPBGA of 

the MPC8309.

For the following sections, P

×

, where P

I/O

 is the power dissipation of the I/O 

drivers. 

An estimation of the chip junction temperature, T

J

, can be obtained from the equation:

θ

×

where,

 = junction temperature (

°C)

Junction-to-ambient natural convection

Single-layer board (1s)

R

θJA

40

°C/W

1, 2

Junction-to-ambient natural convection

Four-layer board (2s2p)

R

θJA

25

°C/W

1, 2, 3

Junction-to-ambient (@200 ft/min)

Single-layer board (1s)

R

θJMA

33

°C/W

1, 3

Junction-to-ambient (@200 ft/min)

Four-layer board (2s2p)

R

θJMA

22

°C/W

1, 3

Junction-to-board

—

R

θJB

15

°C/W

4

Junction-to-case —

R

θJC

9

°C/W

5

Junction-to-package top

Natural convection

Ψ

JT

2

°C/W

6

1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) 

temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal 
resistance.

2. Per JEDEC JESD51-2 with the single layer board horizontal. Board meets JESD51-9 specification.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on 

the top surface of the board near the package.

5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 

1012.1).

6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature 

per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.