STMicroelectronics HVLED805 Demonstration Board STEVAL-ILL037V1 STEVAL-ILL037V1 Fiche De Données
Codes de produits
STEVAL-ILL037V1
Electrical characteristics
HVLED805
6/29
Doc ID 18077 Rev 1
V
DMGH
Upper clamp voltage
I
DMG
= 1 mA
3.0
3.3
3.6
V
V
DMGL
Lower clamp voltage
I
DMG
= - 1 mA
-90
-60
-30
mV
V
DMGA
Arming voltage
positive-going edge
100
110
120
mV
V
DMGT
Triggering voltage
negative-going edge
50
60
70
mV
I
DMGON
Min. source current during MOSFET ON-time
-25
-50
-75
µA
T
BLANK
Trigger blanking time after MOSFET’s turn-off
V
COMP
≥ 1.3V
6
µs
V
COMP
= 0.9V
30
Line feedforward
R
FF
Equivalent feedforward resistor
I
DMG
= 1mA
45
Ω
Transconductance error amplifier
V
REF
Voltage reference
Tj = 25 °C
(1)
2.45
2.51
2.57
V
Tj = -25 to 125°C and
Vcc=12V to 23V
Vcc=12V to 23V
(1)
2.4
2.6
gm
Transconductance
ΔI
COMP
= ±10 µA
V
COMP
= 1.65 V
1.3
2.2
3.2
mS
Gv
Voltage gain
Open loop
73
dB
GB
Gain-bandwidth product
500
kHz
I
COMP
Source current
V
DMG
= 2.3V, V
COMP
= 1.65V
70
100
µA
Sink current
V
DMG
= 2.7V, V
COMP
= 1.65V
400
750
µA
V
COMPH
Upper COMP voltage
V
DMG
= 2.3V
2.7
V
V
COMPL
Lower COMP voltage
V
DMG
= 2.7V
0.7
V
V
COMPBM
Burst-mode threshold
1
V
Hys
Burst-mode hysteresis
65
mV
Current reference
V
ILEDx
Maximum value
V
COMP
= V
COMPL
(1)
1.5
1.6
1.7
V
V
CLED
Current reference voltage
0.192
0.2
0.208
V
Current sense
t
LEB
Leading-edge blanking
200
250
300
ns
t
d(H-L)
Delay-to-output
300
ns
V
CSx
Max. clamp value
(1)
dVcs/dt = 200 mV/µs
0.7
0.75
0.8
V
V
CSdis
Hiccup-mode OCP level
(1)
0.92
1
1.08
V
1.
Parameters tracking each other
Table 4.
Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ. Max. Unit