Rohm Semiconductor FMG9AT148 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V FMG9AT148 Fiche De Données

Codes de produits
FMG9AT148
Page de 3
EMG9 / UMG9N / FMG9A 
Transistors                                                                                                                                                                       
  
Rev.A 
1/2 
Emitter common   
(dual digital transistors) 
EMG9 / UMG9N / FMG9A 
 
 
zFeatures 
1) Two DTC114E in a EMT or UMT or SMT package. 
2) Mounting cost and area can be cut in half. 
 
 
zStructure 
Epitaxial planar type 
NPN silicon transistor 
(Built-in resistor type) 
 
 
The following characteristics apply to both the DTr
1
 and 
DTr
2
 
 
zEquivalent circuit 
EMG9 / UMG9N
FMG9A
R
1
R
1
DTr
1
DTr
2
(3)
(4)
(5)
(2)
(1)
R
1
=10k
Ω
R
2
=10k
Ω
R
2
R
2
R
1
R
1
DTr
1
DTr
2
(3)
(2)
(1)
(4)
(5)
R
1
=10k
Ω
R
2
=10k
Ω
R
2
R
2
 
 
 
zAbsolute maximum ratings (Ta = 25
°C) 
Parameter
Symbol
Limits
Unit
V
CC
50
V
40
V
V
IN
10
I
O
50
mA
I
C (Max.)
100
Tj
150
˚C
Tstg
55 to 
+
150
˚C
Pd
EMG9, UMG9N
150 (TOTAL)
mW
FMG9A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
 
 
zExternal dimensions (Unit : mm) 
ROHM  :  EMT5
EMG9
ROHM  :  UMT5
EIAJ  :  SC-88A
UMG9N
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
( 4
)
( 5
)
( 1
)
0.3
( 3
)
0.95
( 2
)
Abbreviated symbol : G9
Abbreviated symbol : G9
Abbreviated symbol : G9
ROHM  :  SMT5
EIAJ  :  SC-74A
FMG9A
0.9
0.15
0to0.1
0.1Min.
0.7
2.1
1.3
0.65
2.0
( 4
)
( 1
)
( 5
)
0.2
1.25
( 2
)
0.65
( 3
)
0.22
1.2
1.6
(1)
(2)
(3)
(5)
(4)
0.13
0.5
0.5
0.5
1.0
1.6