Rohm Semiconductor IMT1AT110 Bipolar Transistor Emitter reverse voltage U(CEO) -50 V IMT1AT110 Fiche De Données

EMT1 / UMT1N / IMT1A

 

Transistors

                                                                                                                                                                     

 

 

Rev.C 1

/

3 

General Purpose Transistor 
(Isolated Dual Transistors) 

 
 
zFeatures 
1) Two 2SA1037AK chips in a EMT or UMT or SMT   
   package. 
2) Mounting possible with EMT3 or UMT3 or SMT3 
    automatic mounting machines. 
3) Transistor elements are independent, 
  eliminating interference. 
 
 
zStructure 
Epitaxial planar type 
PNP silicon transistor 
 
 
zEquivalent circuit 

EMT1 / UMT1N

IMT1A

Tr

2

Tr

1

(3)

(2)

(1)

(4)

(5)

(6)

Tr

2

Tr

1

(4)

(5)

(6)

(3)

(2)

(1)

 
 
The following characteristics apply to both   
Tr

1 

and Tr

2

. 

 
 
zAbsolute maximum ratings (Ta = 25

°C) 

Parameter

Symbol

V

CBO

V

CEO

V

EBO

I

C

Tj

Tstg

P

C

EMT1, UMT1N

IMT1A

Limits

−

60

−

50

−

6

−

150

150

−

55 to +150

150 (TOTAL)

300 (TOTAL)

Unit

V

V

V

mA

°

C

°

C

mW

∗

1

∗

2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector
power 
dissipation

∗

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

zDimensions (Unit : mm) 

ROHM  :  EMT6

EMT1

ROHM  :  UMT6
EIAJ  :  SC-88

UMT1N

(6) (5) (4)

(1) (2) (3)

(6) (5) (4)

(1) (2) (3)

(4)

(5)

(6)

(3)

(2)

(1)

ROHM  :  SMT6
EIAJ  :  SC-74

IMT1A

Abbreviated symbol : T1

Abbreviated symbol : T1

Abbreviated symbol : T1

Each lead has same dimensions

Each lead has same dimensions

Each lead has same dimensions