Rohm Semiconductor IMX1T110 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMX1T110 Fiche De Données
Codes de produits
IMX1T110
EMX1 / UMX1N / IMX1
Transistors
1/3
General purpose transistors
(dual transistors)
(dual transistors)
EMX1 / UMX1N / IMX1
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Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
interference.
4) Mounting cost and area can be cut in half.
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Structure
Epitaxial planar type
NPN silicon transistor
NPN silicon transistor
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Equivalent circuit
EMX1 / UMX1N
IMX1
(3)
(2)
(1)
(4)
(6)
(5)
Tr
2
Tr
1
(3)
(2)
(1)
(4)
(6)
(5)
Tr
2
Tr
1
The following characteristics apply to both Tr
1
and Tr
2.
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Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
V
CBO
60
V
50
V
V
V
CEO
V
EBO
7
I
C
mA
150
Tj
150
˚C
Tstg
−
55
∼+
150
˚C
P
C
EMX1, UMX1N
150 (TOTAL)
mW
IMX1
300 (TOTAL)
∗
1
∗
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
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External dimensions (Units : mm)
ROHM : EMT6
EMX1
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
UMX1N
Abbreviated symbol : X1
Abbreviated symbol : X1
Abbreviated symbol : X1
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
IMX1
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
0.5
1.0
1.6