Infineon Technologies N/A BC 808-16 W PNP Case type SOT 323 I(C) 0.5 A BC808-16W Fiche De Données

Codes de produits
BC808-16W
Page de 5
Semiconductor Group
1
Dec-19-1996
BC 807-16W
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
Type
Marking Ordering Code
Pin Configuration
Package
BC 807-16W
5As
Q62702-C2325
1 = B
2 = E
3 = C
SOT-323
BC 807-25W
5Bs
Q62702-C2326
1 = B
2 = E
3 = C
SOT-323
BC 807-40W
5Cs
Q62702-C2327
1 = B
2 = E
3 = C
SOT-323
BC 808-16W
5Es
Q62702-C2328
1 = B
2 = E
3 = C
SOT-323
BC 808-25W
5Fs
Q62702-C2329
1 = B
2 = E
3 = C
SOT-323
BC 808-40W
5Gs
Q62702-C2330
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
BC   807 W
BC   808 W
V
CEO
 25
 45
V
Collector-base voltage
BC   807 W
BC   808 W
V
CBO
 30
 50
Emitter-base voltage
V
EBO
 5
DC collector current
I
C
 500
mA
Peak collector current
I
CM
 1
A
Base current
I
B
 100
mA
Total power dissipation, 
T
S
 = 130°C
P
tot
 250
mW
Junction temperature
T
j
 150
°C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient      
1)
R
thJA
 215
K/W
Junction - soldering point
R
thJS
 80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
 Cu