Fairchild Semiconductor N/A TIP30CTU Fiche De Données
Codes de produits
TIP30CTU
TIP30/TIP30A/TIP30
B/TIP30C —
PN
P
Epit
P
Epit
axial Silicon T
ransistor
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A
2
Electrical Characteristics
T
C
=25
°C unless otherwise noted
* Pulse Test: PW
≤300ms, Duty Cycle≤2%
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
: TIP30A
: TIP30B
: TIP30C
I
C
= -30mA, I
B
= 0
-40
-60
-80
-60
-80
-100
V
V
V
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP30/30A
: TIP30B/30C
: TIP30B/30C
V
CE
= -30V, I
B
=
0
V
CE
= -60V, I
B
= 0
-0.3
-0.3
-0.3
mA
mA
mA
I
CES
Collector Cut-off Current
: TIP30
: TIP30A
: TIP30B
: TIP30C
: TIP30A
: TIP30B
: TIP30C
V
CE
= -40V, V
EB
= 0
V
CE
= -60V, V
EB
= 0
V
CE
= -80V, V
EB
= 0
V
CE
= -100V, V
EB
= 0
-200
-200
-200
-200
-200
-200
-200
μA
μA
μA
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current
V
EB
= -5V, I
C
= 0
-1.0
mA
h
FE
* DC Current Gain
V
CE
= -4V,I
C
= -0.2A
V
CE
= -4V, I
C
= -1A
40
15
15
75
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= -1A, I
B
= -125mA
-0.7
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
V
CE
= -4V, I
C
= -1A
-1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= -10V, I
C
= -200mA, f = 1MHz
3.0
MHz