Fairchild Semiconductor N/A TIP147TU Fiche De Données
Codes de produits
TIP147TU
TIP145 / TIP146 / TIP147 — PNP Ep
it
axial Silicon Darlington T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1
1
October 2009
TIP145 / TIP146 / TIP147
PNP Epitaxial Silicon Darlington Transistor
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= -4V, I
C
= -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : TIP145
: TIP146
: TIP147
: TIP147
- 60
- 80
- 80
- 100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
: TIP147
- 60
- 80
- 80
- 100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 10
A
I
CP
Collector Current (Pulse)
- 15
A
I
B
Base Current (DC)
- 0.5
A
P
C
Collector Dissipation (T
C
=25
°C)
125
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 to +150
°C
TO-3P
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1
R2
R1
8k
Ω
≅
R2
0.12k
Ω
≅