Rohm Semiconductor IMX8T108 Bipolar Transistor Emitter reverse voltage U(CEO) 120 V IMX8T108 Fiche De Données

IMX8  

Transistors                                                                                                                                                         

  

Rev.A 

1/2

 

General purpose (dual transistors) 

 
 
zFeatures 
1) Two 2SC3906K chips in an SMT package. 
2) High breakdown voltage. 
 
 
zPackage, marking, and packaging specifications 

IMX8

SMT6

X8

T108

3000

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

zExternal dimensions (Unit : mm) 

ROHM : SMT6
EIAJ : SC-74

Each lead has same dimensions

( 6

)

( 5

)

( 4

)

0.3Min.

0.15

0.3

1.1

0.8

0~0.1

( 3

)

2.8

1.6

1.9

2.9

0.95

( 2

)

0.95

( 1

)

zEquivalent circuit 

(1)

(2)

(3)

(4)

Tr

2

Tr

1

(5) (6)

 

 
 
zAbsolute maximum ratings (Ta=25

°C) 

Parameter

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pc

Tj

Tstg

Limits

120

120

5

50

150

−

55 to +150

Unit

V

V

V

mA

mW

∗

°

C

°

C

300(TOTAL)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗ 

200mW per element must not be exceeded.

 
zElectrical characteristics (Ta=25

°C) 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

120

120

5

−
−

180

−
−
−
−
−
−

−
−
−

0.5

0.5

820

V

V

V

µ

A

µ

A

−

Transition frequency

f

T

−

140

−

MHz

I

C

=

50

µ

A

I

C

=

1mA

I

E

=

50

µ

A

V

CB

=

100V

V

EB

=

4V

V

CE(sat)

−

−

0.5

V

I

C

/I

B

=

10mA/1mA

V

CE

=

6V, I

C

=

2mA

V

CE

=

12V, I

E

= −

2mA, f

=

100MHz

∗

Transition frequency of the device

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

∗