Rohm Semiconductor IMH5AT108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMH5AT108 Fiche De Données
Codes de produits
IMH5AT108
UMH5N / IMH5A
Transistors
Rev.C 1/2
General purpose (dual digital transistors)
UMH5N / IMH5A
zFeatures
1) Two DTC124E chips in a EMT or UMT or SMT
package.
zCircuit schematic
(4)
(5)
(6)
(3)
(2)
(1)
UMH5N
R
1
R
1
=
R
2
=
22k
Ω
R
1
=
R
2
=
22k
Ω
R
2
R
2
R
1
(3)
(2)
(1)
(4)
(5)
(6)
IMH5A
R
1
R
2
R
2
R
1
zAbsolute maximum ratings (Ta = 25
°C)
Parameter
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
C(MAX)
Pd
Tj
Tstg
Limits
40
50
−
10
100
300(TOTAL)
150(TOTAL)
IMH5A
UMH5N
150
−
55
to
+
150
Unit
V
V
mA
mW
∗
1
∗
2
°
C
°
C
Supply voltage
Input voltage
Collector current
I
O
30
mA
Output current
Power dissipation
Junction temperature
Storage temperature
zPackage, marking, and packaging specifications
Type
UMH5N
UMT6
H5
TR
3000
IMH5A
SMT6
H5
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
zDimensions (Unit : mm)
UMH5N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
IMH5A
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
(6) (5) (4)
(1) (2) (3)
(4)
(5)
(6)
(3)
(2)
(1)
zElectrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input resistance
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
f
T
R
1
−
3
−
−
−
−
−
−
15.4
0.8
−
−
−
0.1
−
−
−
250
22
−
−
1
0.5
−
0.3
0.36
0.5
−
∗
∗
Characteristics of built-in transistor
28.6
1.2
V
V
mA
µ
A
MHz
k
Ω
R
2
/
R
1
−
V
CC
=
5V, I
O
=
100
µ
A
V
O
=
0.2V, I
O
=
5mA
I
O
=
10mA, I
I
=
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
CE
=
10V, I
E
= −
5mA , f
=
100MHz
Input voltage
Output voltage
Input current
Output current
Transition frequency
G
I
56
−
−
−
V
O
=
5V, I
O
=
5mA
DC current gain
Resistance ratio