Rohm Semiconductor UMX1NTN Bipolar Transistor Emitter reverse voltage U(CEO) 50 V UMX1NTN Fiche De Données

Codes de produits
UMX1NTN
Page de 4
EMX1 / UMX1N / IMX1
Transistors
3/3
0.2
20
10
0.5
1
2
5
10 20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25˚C
DC  CURRENT  GAIN : h
FE
COLLECTOR  CURRENT : I
C
 (mA)
Fig.4  DC current gain vs. collector 
          current ( I )
 
0.2
0.5
1
2
5
10 20
50 100 200
20
10
50
100
200
500
25˚C
55˚C
Ta=100˚C
V
CE
=
5V
DC  CURRENT  GAIN : h
FE
COLLECTOR  CURRENT : I
C
 (mA)
Fig.5  DC current gain vs. collector 
          current ( II )
 
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.02
0.05
0.1
0.2
0.5
 I
C
/I
B
=50
20
10
Ta=25˚C
COLLECTOR  SATURATION  VOLTAGE : V
CE (sat)
 (
V)
COLLECTOR  CURRENT : I
C
 (mA)
Fig.6  Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR  SATURATION  VOLTAGE : V
CE (sat)
 (V)
COLLECTOR  CURRENT : I
C
 (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
  I
C
/I
B
=50
20
10
Ta=25˚C
Fig.7  Collector-emitter saturation
           voltage vs. collector current ( I )
 
0.2
COLLECTOR  SATURATION  VOLTAGE : V
CE (sat)
 (V)
COLLECTOR  CURRENT : I
C
 (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100˚C
25˚C
55˚C
Fig.8  Collector-emitter saturation
           voltage vs. collector current ( II )
 
COLLECTOR  SATURATION  VOLTAGE : V
CE (sat)
 (V)
COLLECTOR  CURRENT : I
C
 (mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100˚C
25˚C
55˚C
Fig.9  Collector-emitter saturation
           voltage vs. collector current ( III )
50
0.5
1
2
5
10
20
50
100
100
200
500
Ta=25˚C
V
CE
=6V
EMITTER  CURRENT : I
E
 (mA)
TRANSITION  FREQUENCY : f
T
 (MHz)
Fig.10  Gain bandwidth product vs. 
            emitter current
 
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cib
Cob
COLLECTOR  TO  BASE  VOLTAGE : V
CB
 (V)
EMITTER  TO  BASE  VOLTAGE    
 
   : V
EB
 (V)
COLLECTOR OUTPUT CAPACITANCE : Cob
 (pF)
EMITTER  INPUT  CAPACITANCE      
 
   : Cib    
 
(pF)
Fig.11  Collector output capacitance vs.
             collector-base voltage
            Emitter input capacitance vs. 
             emitter-base voltage
Ta=25˚C
f
=1MHz
I
E
=0A
I
C
=0A
 
0.2
0.5
1
2
5
10
10
20
50
100
200
EMITTER  CURRENT : I
E
 (mA)
Fig.12  Base-collector time constant vs.
emitter current
 BASE  COLLECTOR  TIME  CONSTANT : Cc  r
bb'
 (ps)
Ta=25
˚C
f=32MH
Z
V
CB
=6V