Nxp Semiconductors Power switching transistors MJE 13009 NPN Case type T PHE13009,127 Fiche De Données

The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.

V

CESM

Collector-emitter voltage peak value

V

BE

 = 0 V

-

700

V

V

CBO

Collector-Base voltage (open emitter)

-

700

V

V

CEO

Collector-emitter voltage (open base)

-

400

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

24

A

P

tot

Total power dissipation

T

mb

 ≤ 25 ˚C

-

80

W

V

CEsat

Collector-emitter saturation voltage

I

C

 = 5.0 A;I

B

 = 1.0 A

0.32

1.0

V

h

FEsat

I

C

 = 5.0 A; V

CE

 = 5 V

-

40

t

f

Fall time

I

C

 = 5.0 A; I

B1

 = 1.0 A

0.1

0.5

µs

1

base

2

collector

3

emitter

tab

collector

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

V

CESM

Collector to emitter voltage

V

BE

 = 0 V

-

700

V

V

CEO

Collector to emitter voltage (open base)

-

400

V

V

CBO

Collector to base voltage (open emitter)

-

700

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

24

A

I

B

Base current (DC)

-

6

A

I

BM

Base current peak value

-

12

A

P

tot

Total power dissipation

T

mb

 ≤ 25 ˚C

-

80

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

R

th j-mb

Junction to mounting base

-

1.56

K/W

R

th j-a

Junction to ambient

in free air

60

-

K/W

1 2 3

tab

b

c

e

March 1999

1

Rev 1.000