Fairchild Semiconductor N/A NZT560A Fiche De Données
Codes de produits
NZT560A
N
Z
T
5
6
0
/N
Z
T
5
6
0
A
—
N
N
P
N
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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NZT560/NZT560A Rev. D1
2
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA
60
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100µA
80
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100µA
5
V
I
CBO
Collector Cutoff Current
V
CB
= 30V
V
CB
= 30V, T
A
= 100°C
100
10
nA
µA
µA
I
EBO
Emitter Cutoff Current
V
EB
= 4V
100
nA
On Characteristics *
h
FE
DC Current Gain
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V NZT560
NZT560A
I
I
C
= 1A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
70
100
250
250
80
25
25
300
550
550
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA NZT560
NZT560A
300
450
400
450
400
mV
mV
mV
mV
mV
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 1A, I
B
= 100mA
1.25
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= 1A, V
CE
= 2V
1
V
Small Signal Characteristics
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
30
pF
f
T
Transition Frequency
I
C
= 100mA, V
CE
= 5V, f = 100MHz
75
MHz