Renesas HSG1001 Manuel D’Utilisation

Rev.1.00,  Apr.08.2004,  page 1 of 37

SiGeHBT
High Frequency Low Noise Amplifier

REJ03G0195-0100Z

Rev.1.00

Apr.08.2004

•

  High power gain and low noise figure ;

•

  MSG = 22 dB typ. , NF = 0.75 dB typ. at V

CE

 = 2 V, I

C

 = 5 mA, f = 1.8 GHz

MSG = 21 dB typ. , NF = 0.85 dB typ. at V

CE

 = 2 V, I

C

 = 5 mA, f = 2.4 GHz

MSG = 15 dB typ. , NF = 1.3 dB typ. at V

CE

 = 2 V, I

C

 = 10 mA, f = 5.8 GHz

•

  Transition Frequency

f

T

 = 35 GHz typ. at  f = 1 GHz

•

  V

CEO

 = 3.5 V

•

  Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.

1

2

3

4

1. Emitter
2. Collector
3. Emitter
4. Base

CMPAK-4

Note:

Marking is "VD-".

(Ta = 25°C)

Collector to base voltage

V

CBO

8

V

Collector to emitter voltage

V

CEO

3.5

V

Emitter to base voltage

V

EBO

1.2

V

Collector current

I

C

35

mA

Pc

100

mW

Collector power dissipation

Pc

Note1

250

mW

Junction temperature

Tj

150

°

C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )