Silicon Laboratories C8051F343 Manuel D’Utilisation

Ambient temperature under bias

–55

125

°C

Storage Temperature

–65

150

°C

Voltage on any Port I/O Pin or /RST with 
respect to GND

–0.3

5.8

V

Voltage on V

DD

 with respect to GND

–0.3

4.2

V

Maximum Total current through V

DD

 and 

GND

500

mA

Maximum output current sunk by /RST or any 
Port pin

100

mA

*Note:  Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the 

device. This is a stress rating only and functional operation of the devices at those or any other conditions 
above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating 
conditions for extended periods may affect device reliability.