Philips BGA2711 Manuale Utente
2001 Oct 19
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
V
S
= 5 V; I
S
= 12.6 mA; f = 1 GHz; T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
−
6
V
I
S
supply current
−
20
mA
P
tot
total power dissipation
T
s
≤
80
°
C
−
200
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
operating junction temperature
−
150
°
C
P
D
maximum drive power
−
10
dBm
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to solder
point
point
P
tot
= 200 mW; T
s
≤
80
°
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
10
12.6
16
mA
|s
21
|
2
insertion power gain
f = 1 GHz
−
13.1
−
dB
f = 2 GHz
−
13.9
−
dB
R
L IN
return losses input
f = 1 GHz
−
11
−
dB
f = 2 GHz
−
10
−
dB
R
L OUT
return losses output
f = 1 GHz
−
18
−
dB
f = 2 GHz
−
13
−
dB
NF
noise figure
f = 1 GHz
−
4.8
−
dB
f = 2 GHz
−
4.8
−
dB
BW
bandwidth
at
|
s
21
|
2
−
3 dB below flat gain at 1 GHz
−
3.6
−
GHz
P
L(sat)
saturated load power
f = 1 GHz
−
2.8
−
dBm
f = 2 GHz
−
0.6
−
dBm
P
L 1 dB
load power
at 1 dB gain compression; f = 1 GHz
−
−
0.7
−
dBm
at 1 dB gain compression; f = 2 GHz
−
−
1.8
−
dBm
IP3
(in)
input intercept point
f = 1 GHz
−
−
4.8
−
dBm
f = 2 GHz
−
−
8.5
−
dBm
IP3
(out)
output intercept point
f = 1 GHz
−
8.3
−
dBm
f = 2 GHz
−
5.4
−
dBm