Hynix HMT351U6BFR8C-H9N0 Manuale Utente
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Rev. 1.0 / Oct. 2010
41
Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above
Correlation from simulated Channel IO Power to actual Channel IO Power supported
by IDDQ Measurement
V
DD
DDR3
SDRAM
V
DDQ
RESET
CK/CK
CK/CK
DQS, DQS
CS
RAS, CAS, WE
RAS, CAS, WE
A, BA
ODT
ZQ
ODT
ZQ
V
SS
V
SSQ
DQ, DM,
TDQS, TDQS
CKE
R
TT
=
25 Ohm
V
DDQ
/2
I
DD
I
DDQ
(optional)
Application specific
memory channel
environment
Channel
IO Power
Simulation
IDDQ
Simulation
IDDQ
Simulation
Channel IO Power
Number
IDDQ
Test Load
Correction
B48614/178.104.2.80/2010-10-18 17:08