Microchip Technology MCP1630DM-DDBS1 Scheda Tecnica
©
2007 Microchip Technology Inc.
DS41211D-page 123
PIC12F683
15.6
Thermal Considerations
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Operating temperature
-40°C
≤
T
A
≤
+125°C
Param
No.
Sym
Characteristic
Typ
Units
Conditions
TH01
θ
JA
Thermal Resistance
Junction to Ambient
Junction to Ambient
84.6
°C/W
8-pin PDIP package
163.0
°C/W
8-pin SOIC package
52.4
°C/W
8-pin DFN-S 4x4x0.9 mm package
46.3
°C/W
8-pin DFN-S 6x5 mm package
TH02
θ
JC
Thermal Resistance
Junction to Case
Junction to Case
41.2
°C/W
8-pin PDIP package
38.8
°C/W
8-pin SOIC package
3.0
°C/W
8-pin DFN-S 4x4x0.9 mm package
2.6
°C/W
8-pin DFN-S 6x5 mm package
TH03
T
J
Junction Temperature
150
°C
For derated power calculations
TH04
PD
Power Dissipation
—
W
PD = P
INTERNAL
+ P
I
/
O
TH05
P
INTERNAL
Internal Power Dissipation
—
W
P
INTERNAL
= I
DD
x V
DD
(NOTE 1)
TH06
P
I
/
O
I/O Power Dissipation
—
W
P
I
/
O
=
Σ
(I
OL
* V
OL
) +
Σ
(I
OH
* (V
DD
- V
OH
))
TH07
P
DER
Derated Power
—
W
P
DER
= (T
J
- T
A
)/
θ
JA
(NOTE 2, 3)
Note 1:
I
DD
is current to run the chip alone without driving any load on the output pins.
2:
T
A
= Ambient Temperature.
3:
Maximum allowable power dissipation is the lower value of either the absolute maximum total power
dissipation or derated power (P
dissipation or derated power (P
DER
).