STMicroelectronics M48Z12-150PC1 Memory IC M48Z12-150PC1 Scheda Tecnica
Codici prodotto
M48Z12-150PC1
Operation modes
M48Z02, M48Z12
Doc ID 2420 Rev 9
2.4 V
CC
noise and negative going transients
I
CC
transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the V
CC
bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the V
CC
bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
generate negative voltage spikes on V
CC
that drive it to values below V
SS
by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a Schottky diode from V
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a Schottky diode from V
CC
to V
SS
(cathode connected to V
CC
, anode to V
SS
).
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
recommended for surface mount.
Figure 8.
Supply voltage protection
AI02169
VCC
0.1µF
DEVICE
VCC
VSS