Fairchild Semiconductor N/A BC81816MTF Scheda Tecnica
Codici prodotto
BC81816MTF
3
www.fairchildsemi.com
BC817/BC818 Rev. B
BC8
17/BC81
8
NPN Epit
axial Silicon
T
rans
istor
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter On Voltage
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
Figure 5. Power Dissipation vs Ambient Temperature
1
10
100
1000
0
100
200
300
400
500
600
125
o
C
25
o
C
-25
o
C
75
o
C
BC81725MTF
Vce=1V
Vce=1V
hf
e,
C
u
rr
en
t Ga
in
Collector Current, [mA]
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
125
o
C
75
o
C
25
o
C
V
CE
= 1V
V
b
e(o
n
),
B
a
se-
E
m
it
ter
On
V
o
lt
ag
e,
[V
]
Collector Current, [mA]
10
100
1000
0.0
0.1
0.2
0.3
0.4
125
o
C
75
o
C
25
o
C
-25
o
C
Ic=10Ib
Vce(
sat
), S
a
tur
a
ti
on Vol
tag
e
,[
V]
Collector Current, [mA]
10
100
1000
0.4
0.6
0.8
1.0
1.2
125
o
C
75
o
C
25
o
C
-25
o
C
Ic=10Ib
Vbe
(sa
t), Satu
ra
tion
V
o
ltag
e,[V]
Collector Current, [mA]
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
P
D
-
Power Dissipatio
n (W)
Temperature, [
O
C]