Nxp Semiconductors BU2520DW BU Transistor NPN SOT 429 (TO 247) 10A 800V BU2520DW Scheda Tecnica
Codici prodotto
BU2520DW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
Fig.3. Switching times test circuit.
Fig.4. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1
10
IC / A
VCESAT / V
BU2520D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
100
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
10
IC / A
hFE
BU2520D
100
10
1
100
1
Tj = 25 C
Tj = 125 C
1 V
5 V
0
1
2
3
4
IB / A
VBESAT / V
BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IC / A
VBESAT / V
BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
BU2520D
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
September 1997
3
Rev 1.100