Korea Electronics N/A Emitter reverse voltag KN2222A Scheda Tecnica
Codici prodotto
KN2222A
1996. 1. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=10nA(Max.) ; V
CE
=60V, V
EB(OFF)
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; I
C
=150mA, I
B
=15mA.
Complementary to the KN2907/2907A.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
KN2222
KN2222A
Collector-Base Voltage
V
CBO
60
75
V
Collector-Emitter Voltage
V
CEO
30
40
V
Emitter-Base Voltage
V
EBO
5
6
V
Collector Current
I
C
600
mA
Collector Power Dissipation
(Ta=25
)
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150