On Semiconductor N/A BD 159 NPN Case type TO 225 AA I(C) 0.5 BD159 Scheda Tecnica
Codici prodotto
BD159
BD159
2
Motorola Bipolar Power Transistor Device Data
25
20
15
10
5.0
0
20
40
60
80
100
120
140
160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (
°
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
1.0
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
0
20
30
50
100
200 300
500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
TJ = + 25
°
C
VBE @ IC/IB = 10
IC/IB = 5.0
V
, VOL
TAGE
(VOL
TS)
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01
20
30
50
100
300
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
THERMALLY LIMITED @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
I C
, COLLECT
OR
CURRENT
(AMPS)
TJ = 150
°
C
dc
500
µ
s
10
µ
s
1.0 ms
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10
1.0
2.0
3.0
5.0
10
20
30
50
100
200
300
500
300
200
70
30
20
TJ = 150
°
C
h
FE
, DC CURRENT
GAIN
50
100
+ 100
°
C
+ 25
°
C
– 55
°
C
7.0
70
VCE = 10 V
VCE = 2.0 V
VCE = 2.0 V