Fairchild Semiconductor N/A BD238STU Scheda Tecnica
Codici prodotto
BD238STU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD234/
236/
238
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BD234
: BD236
: BD238
: BD236
: BD238
- 45
- 60
- 60
- 100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD234
: BD236
: BD238
: BD236
: BD238
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD234
: BD236
: BD238
: BD236
: BD238
- 45
- 60
- 60
- 100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 2
A
I
CP
*Collector Current (Pulse)
- 6
A
P
C
Collector Dissipation (T
C
=25
°
C)
25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD234
: BD236
: BD238
: BD236
: BD238
I
C
= - 100mA, I
B
= 0
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
I
CBO
Collector Cut-off Current
: BD234
: BD236
: BD238
: BD236
: BD238
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 100
- 100
- 100
- 100
- 100
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1
mA
h
FE
* DC Current Gain
V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
40
25
25
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 1A , I
B
= - 0.1A
- 0.6
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 2V, I
C
= - 1A
- 1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= - 10V, I
C
= -250mA
3
MHz
BD234/236/238
Medium Power Linear and Switching
Applications
Applications
• Complement to BD 233/235/237 respectively
1
TO-126
1. Emitter 2.Collector 3.Base