Kingston 240-pin DIMM DDR3 RAM PC Memory HX316C10FB/4 Scheda Tecnica

HyperX HX316C10FB/4 is a 512M x 64-bit (4GB) DDR3-1600

CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module,

based on eight 512M x 8-bit DDR3 FBGA components. This

module has been tested to run at DDR3-1600 at a low latency

timing of 10-10-10 at 1.5V. Additional timing parameters are

shown in the PnP Timing Parameters section below. The

JEDEC standard electrical and mechanical specifications are

as follows:

CL(IDD)

10 cycles

Row Cycle Time (tRCmin)

48.125ns (min.)

Refresh to Active/Refresh

260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

37.5ns (min.)

Maximum Operating Power

TBD W*

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

*Power will vary depending on the SDRAM used.

•

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

•

VDDQ = 1.5V (1.425V ~ 1.575V)

•

800MHz fCK for 1600Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 11, 10, 9, 8, 7, 6

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

•

Bi-directional Differential Data Strobe

•

Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB : Height 1.180” (30.00mm), single  sided  component

4GB 512M x 64-Bit DDR3-1600
CL10 240-Pin DIMM

Continued >>

•

DDR3-1600 CL10-10-10 @1.5V

•

DDR3-1333 CL9-9-9 @1.5V

•

DDR3-1066 CL7-7-7 @1.5V

Note: The PnP feature offers a range of speed and timing options to support
the widest variety of processors and chipsets. Your maximum speed will
be determined by your BIOS.

HX318C10FB/4