Teledyne Microscope & Magnifier 100E Manuale Utente

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A Primer on Electro-Static Discharge 
Teledyne API M100E Analyzer Operation Manual 
296  
 
Table 13-1:  Static Generation Voltages for Typical Activities 
MEANS OF GENERATION 
65-90% RH
 
10-25% RH 
Walking across nylon carpet 
1,500V 
35,000V 
Walking across vinyl tile 
250V 
12,000V 
Worker at bench 
100V 
6,000V 
Poly bag picked up from bench 
1,200V 
20,000V 
Moving around in a chair padded 
with urethane foam 
1,500V 18,000V 
 
13.2. HOW ELECTRO-STATIC CHARGES CAUSE DAMAGE 
Damage to components occurs when these static charges come into contact with an electronic device.  Current 
flows as the charge moves along the conductive circuitry of the device and the typically very high voltage levels of 
the charge overheat the delicate traces of the integrated circuits, melting them or even vaporizing parts of them.  
When examined by microscope the damage caused by electro-static discharge looks a lot like tiny bomb craters 
littered across the landscape of the component’s circuitry. 
A quick comparison of the values in Table 13-1 with the those shown in the Table 13-2, listing device susceptibility 
levels, shows why Semiconductor Reliability News estimates that approximately 60% of device failures are the 
result of damage due to electro-static discharge. 
Table 13-2:  Sensitivity of Electronic Devices to Damage by ESD 
DAMAGE SUSCEPTIBILITY VOLTAGE 
RANGE 
DEVICE 
DAMAGE BEGINS 
OCCURRING AT 
CATASTROPHIC 
DAMAGE AT 
MOSFET 10 
100 
VMOS 30 
1800 
NMOS 60 
100 
GaAsFET 60 
2000 
EPROM 100 
100 
JFET 140 
7000 
SAW 150 
500 
Op-AMP 190 
2500 
CMOS 200 
3000 
Schottky Diodes 
300 
2500 
Film Resistors 
300 
3000 
This Film Resistors 
300 
7000 
ECL 500 
500 
SCR 500 
1000 
Schottky TTL 
500 
2500 
 
 
04515F DCN6048