Cypress CY62138EV30 ユーザーズマニュアル
CY62138EV30
MoBL
®
Document #: 38-05577 Rev. *A
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
lines, not tested.)
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Power Applied............................................... 55°C to +125°C
Supply Voltage to Ground
Potential ........................................ –0.3V to V
Potential ........................................ –0.3V to V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
in High-Z State
......................... –0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
...................... –0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Product
Range
Ambient
Temperature
V
CC
CY62138EV30LL
Industrial –40°C to +85°C
2.2V to
3.6V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
CY62138EV30-45
Unit
Min.
Typ.
Max.
V
OH
Output HIGH Voltage I
OH
= –0.1
mA
V
CC
= 2.20V
2.0
V
I
OH
= –1.0
mA
V
CC
= 2.70V
2.4
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA V
CC
= 2.20V
0.4
V
I
OL
= 2.1 mA V
CC
= 2.70V
0.4
V
V
IH
Input HIGH Voltage
V
CC
= 2.2V to 2.7V
1.8
V
CC
+ 0.3V
V
V
CC
= 2.7V to 3.6V
2.2
V
CC
+ 0.3V
V
V
IL
Input LOW Voltage
V
CC
= 2.2V to 2.7V
–0.3
0.6
V
V
CC
= 2.7V to 3.6V
–0.3
0.8
V
I
IX
Input Leakage
Current
Current
GND < V
I
< V
CC
–1
+1
µA
I
OZ
Output Leakage
Current
Current
GND < V
O
< V
CC
,
Output Disabled
–1
+1
µA
I
CC
V
CC
Operating
Supply Current
f = f
MAX
=
1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
15
20
mA
f = 1 MHz
2
2.5
mA
I
SB1
Automatic CE
Power-down
Current — CMOS
Inputs
Power-down
Current — CMOS
Inputs
CE > V
CC
–
0.2V, V
IN
> V
CC
– 0.2V,
V
IN
< 0.2V), f = f
MAX
(Address and
Data Only), f = 0 (OE, and WE),
V
V
CC
= 3.60V
1
7
µA
I
SB2
Automatic CE
Power-down
Current — CMOS
Inputs
Power-down
Current — CMOS
Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1
7
µA
Capacitance
for all packages
[7]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ.)
10
pF
C
OUT
Output Capacitance
10
pF
Notes:
4. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
µs ramp time from 0 to V
CC
(min.) and 200
µs wait time after V
CC
stabilization.