Motorola MCF5282 ユーザーズマニュアル

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Chapter 27.  Queued Analog-to-Digital Converter (QADC)  
27-69
Signal Connection Considerations
• Analog ground must be low impedance to all analog ground points in the circuit.
• Bypass capacitors should be as close to the power pins as possible.
• The analog ground should be isolated from the digital ground. This can be done by 
cutting a separate ground plane for the analog ground.
• Non-minimum traces should be utilized for connecting bypass capacitors and filters 
to their corresponding ground/power points.
• Minimum distance for trace runs when possible.
27.9.5 Accommodating Positive/Negative Stress Conditions
Positive or negative stress refers to conditions which exceed nominally defined operating
limits. Examples include applying a voltage exceeding the normal limit on an input (for
example, voltages outside of the suggested supply/reference ranges) or causing currents
into or out of the pin which exceed normal limits. QADC specific considerations are
voltages greater than V
DDA
 or less than V
SSA
 applied to an analog input which cause
excessive currents into or out of the input. Refer to MCF5282 Electrical Characteristics for
more information on exact magnitudes.
Either stress conditions can potentially disrupt conversion results on neighboring inputs.
Parasitic devices, associated with CMOS processes, can cause an immediate disruptive
influence on neighboring pins. Common examples of parasitic devices are diodes to
substrate and bipolar devices with the base terminal tied to substrate (V
SS
/V
SSA
 ground).
Under stress conditions, current injected on an adjacent signal can cause errors on the
selected channel by developing a voltage drop across the selected channel’s impedances.
Figure 27-50 shows an active parasitic bipolar NPN transistor when an input signal is
subjected to negative stress conditions. Figure 27-51 shows positive stress conditions can
activate a similar PNP transistor.
Figure 27-50. Input Signal Subjected to Negative Stress
R
STRESS
R
SELECTED
Adjacent
10 k
Ω
Signal Under
Parasitic
I
injn
I
IN
+
Stress
V
STRESS
Device
Signal
V
IN
AN
n
AN
n+1