Dataram DTM67207B ユーザーズマニュアル
DTM67207B
2 GB – 200-Pin Unbuffered non-ECC DDR2 SO-DIMM
Document 06553, Revision A, 08-Jul-09, Dataram Corporation
© 2009
Page 1
Features
Description
200-pin JEDEC SO-DIMM Dual-sided assembly 67.60 mm
[2.661”] wide by 30.0 mm [1.181”] high
[2.661”] wide by 30.0 mm [1.181”] high
Operating Voltage: 1.8 V ±0.1
I/O Type: SSTL_18
Data Transfer Rate: 5.3 Gigabytes/sec
Burst Lengths: 4 and 8
Programmable I/O driver strength (OCD)
Programmable On-Die Termination (ODT)
Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 14/10/3
Two Physical Ranks
Fully RoHS Compliant
The Dataram DTM67207B assembly is a 256M
x64bit Unbuffered non-ECC memory module that
conforms to the JEDEC PC2-4300 standard.
The DTM67207B assembly is Dual-Rank. Each
rank is comprised of eight Hynix 128Mx8 DDR2
SDRAMs in 60 Ball FBGA packages.
A 2Kbit EEPROM for serial presence detect pro-
vides critical timing and configuration information
used by the system to identify and configure the
memory.
The assembly is a Small Outline Dual In-line
Memory Module intended for mounting into 200-
pin edge connector sockets.
x64bit Unbuffered non-ECC memory module that
conforms to the JEDEC PC2-4300 standard.
The DTM67207B assembly is Dual-Rank. Each
rank is comprised of eight Hynix 128Mx8 DDR2
SDRAMs in 60 Ball FBGA packages.
A 2Kbit EEPROM for serial presence detect pro-
vides critical timing and configuration information
used by the system to identify and configure the
memory.
The assembly is a Small Outline Dual In-line
Memory Module intended for mounting into 200-
pin edge connector sockets.
Pin Configurations
Pin Names
Front side
Back side
Pin name
Function
1 V
REF
51 DQS2
101 A1
151 DQ42
2
V
SS
52
DM2 102 A0 152 DQ46 /RAS
Row Address Strobe
3 V
SS
53 V
SS
103 V
DD
153
DQ43
4
DQ4 54
V
SS
104 V
DD
154 DQ47 /CAS
Column Address Strobe
5 DQ0
55 DQ18
105 A10/AP 155 V
SS
6
DQ5 56
DQ22
106 BA1 156 V
SS
/WE Write
Enable
7 DQ1
57 DQ19
107 BA0
157 DQ48
8
V
SS
58
DQ23
108 /RAS
158 DQ52 /S[1:0] Chip
Select
9 V
SS
59 V
SS
109 /WE
159 DQ49
10 DM0
60 V
SS
110 /S0 160 DQ53 CK[1:0],/CK[1:0]
Differential Clock
11 /DQS0 61 DQ24
111 V
DD
161
V
SS
12
V
SS
62
DQ28
112 V
DD
162 V
SS
CKE[1:0] Clock
Enable
13 DQS0
63 DQ25
113 /CAS
163 NC
14 DQ6
64 DQ29
114 ODT0
164 CK1
ODT[1:0] On-Die
Termination
15 V
SS
65 V
SS
115 /S1
165 V
SS
16 DQ7
66 V
SS
116 A13 166 /CK1 BA[2:0] Bank
Select
17 DQ2
67 DM3
117 V
DD
167
/DQS6
18
V
SS
68
DQS3
118 V
DD
168 V
SS
A[13:0] Address
Input
(Multiplexed)
19 DQ3
69 NC
119 ODT1
169 DQS6
20 DQ12
70 DQS3
120 NC
170 DM6
SCL Serial
Clock
21 V
SS
71 V
SS
121 V
SS
171
V
SS
22 DQ13 72 V
SS
122 V
SS
172 V
SS
SDA
Serial Data I/O
23 DQ8
73 DQ26
123 DQ32
173 DQ50
24 V
SS
74
DQ30 124 DQ36 174 DQ54
SA[1:0] Address
EEPROM
25 DQ9
75 DQ27
125
DQ33 175
DQ51 26
DM1 76
DQ31 126 DQ37 176 DQ55
DQS[7:0] Data
Strobes
27 V
SS
77 VSS
127 V
SS
177
V
SS
28
V
SS
78
V
SS
128 V
SS
178 V
SS
DM[7:0] Data
Masks
29 /DQS1 79 CKE0
129 /DQS4 179 DQ56 30 CK0
80 CKE1 130 DM4
180 DQ60
DQ[63:0]
Data I/Os: Data Bus
31 DQS1
81 V
DD
131 DQS4
181 DQ57 32 /CK0
82 V
DD
132 V
SS
182 DQ61 /Event* Temperature
Sensing.
33 V
SS
83 NC
133 V
SS
183
V
SS
34
V
SS
84
N
C 134 DQ38
184 V
SS
V
REF
Reference
Voltage.
35 DQ10
85 BA2
135
DQ34 185
DM7 36
DQ14 86
N
C 136 DQ39 186 /DQS7
V
DD
Power Supply: 1.8V ±0.1
37 DQ11
87 V
DD
137 DQ35
187 V
SS
38 DQ15 88 V
DD
138 V
SS
188 DQS7 V
SS
Ground
39 V
SS
89 A12
139 V
SS
189
DQ58
40
V
SS
90
A11 140 DQ44
190 V
SS
V
DDSPD
Serial EEPROM Power Supply
41 V
SS
91 A9
141 DQ40
191 DQ59
42 V
SS
92
A7 142 DQ45
192 DQ62 NC No
Connects
43 DQ16
93 A8
143 DQ41
193 V
SS
44 DQ20 94 A6
144 V
SS
194 DQ63
45 DQ17
95 V
DD
145 V
SS
195 SDA
46 DQ21 96 V
DD
146 /DQS5
196 V
SS
47 V
SS
97 A5
147 DM5
197 SCL
48 V
SS
98
A4 148 DQS5
198 SA0
49 /DQS2 99 A3
149 V
SS
199
V
DD
SPD 50 /Event* 100 A2
150 V
SS
200 SA1
* - not used on the DTM67207B.
Identification
DTM67207B 256Mx64
2GB 2Rx8 PC2-4200S-444-12-F1
2GB 2Rx8 PC2-4200S-444-12-F1
Performance range
Clock/ Module Speed/ CL-t
RCD
-t
RP
266 MHz / DDR2-533 / 4-4-4
200 MHz / DDR2-400 / 3-3-3
200 MHz / DDR2-400 / 3-3-3