Dataram 4GB, 240-Pin DTM64313 ユーザーズマニュアル
製品コード
DTM64313
DTM64313H
4GB - 240-Pin 2Rx4 Registered ECC DDR3 DIMM
Document 06606, Revision A, 08-Sep-10, Dataram Corporation
© 2010
Page 1
Features
Description
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: 1.5V ± 0.075
I/O Type: SSTL_15
On-board I
2
C temperature sensor with integrated Serial Presence-
Detect (SPD) EEPROM
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 6, 7, 8, and 9
Bi-directional Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 14/11/3
Fully RoHS Compliant
DTM64313H is a registered 512Mx72 memory module,
which conforms to JEDEC's DDR3, PC3-10600 standard.
The assembly is Dual-Rank. Each rank is comprised of
eighteen 256Mx4 DDR3 Samsung SDRAMs. One 2K-bit
EEPROM is used for Serial Presence Detect and a
combination register/PLL, with Address and Command
Parity, is also used. Both output driver strength and input
termination impedance are programmable to maintain
signal integrity on the I/O signals.
A thermal sensor accurately monitors the DIMM module
and can prevent exceeding the maximum operating
temperature of 95C.
which conforms to JEDEC's DDR3, PC3-10600 standard.
The assembly is Dual-Rank. Each rank is comprised of
eighteen 256Mx4 DDR3 Samsung SDRAMs. One 2K-bit
EEPROM is used for Serial Presence Detect and a
combination register/PLL, with Address and Command
Parity, is also used. Both output driver strength and input
termination impedance are programmable to maintain
signal integrity on the I/O signals.
A thermal sensor accurately monitors the DIMM module
and can prevent exceeding the maximum operating
temperature of 95C.
Pin Configuration
Pin Description
Front Side
Back Side
Name
Function
1 V
REFDQ
31 DQ25
61 A2
91 DQ41 121 V
SS
151
V
SS
181 A1
211 V
SS
CB[7:0]
Data Check Bits
2 V
SS
32
V
SS
62
V
DD
92
V
SS
122
DQ4 152
DQS12 182 V
DD
212 DQS14 DQ[63:0]
Data
Bits
3 DQ0 33 /DQS3
63
CK1* 93 /DQS5 123
DQ5 153
/DQS12 183 V
DD
213 /DQS14
DQS[17:0], /DQS[17:0]
Differential Data Strobes
4 DQ1 34 DQS3
64
/CK1* 94 DQS5 124
V
SS
154
V
SS
184 CK0
214 V
SS
CK[1:0], /CK[1:0]
Differential Clock Inputs
5 V
SS
35
V
SS
65
V
DD
95
V
SS
125
DQS9
155
DQ30 185 /CK0 215 DQ46 CKE[1:0]
Clock
Enables
6 /DQS0
36 DQ26
66 V
DD
96
DQ42
126
/DQS9
156
DQ31 186 V
DD
216 DQ47
/CAS
Column Address Strobe
7 DQS0 37 DQ27
67 V
REFCA
97 DQ43 127
V
SS
157
V
SS
187 /EVENT 217 V
SS
/RAS
Row Address Strobe
8 V
SS
38
V
SS
68
P
AR
_I
N
98 V
SS
128
DQ6 158
CB4
188 A0 218 DQ52 /S[3:0]
Chip
Selects
9 DQ2 39 CB0
69 VDD 99 DQ48 129
DQ7 159
CB5
189 V
DD
219 DQ53 /WE
Write
Enable
10 DQ3 40 CB1
70 A10/AP 100 DQ49 130 V
SS
160
V
SS
190 BA1
220 V
SS
A[15:0]
Address
Inputs
11 V
SS
41
V
SS
71
BA0
101
V
SS
131
DQ12
161
DQS17 191 V
DD
221 DQS15 BA[2:0]
Bank
Addresses
12 DQ8 42 /DQS8
72 V
DD
102 /DQS6 132 DQ13 162 /DQS17
192 /RAS
222 /DQS15
ODT[1:0]
On Die Termination Inputs
13 DQ9 43 DQS8
73 /WE
103 DQS6 133 V
SS
163
V
SS
193 /S0
223 V
SS
SA[2:0]
SPD
Address
14 V
SS
44
V
SS
74
/CAS
104
V
SS
134
DQS10
164
CB6
194 V
DD
224 DQ54
SCL
SPD Clock Input
15 /DQS1 45 CB2
75 V
DD
105 DQ50 135 /DQS10 165 CB7
195 ODT0
225 DQ55
SDA
SPD Data Input/Output
16 DQS1 46 CB3
76 /S1
106 DQ51 136 V
SS
166
V
SS
196 A13
226 V
SS
/EVENT
Temperature Sensing
17 V
SS
47
V
SS
77
ODT1
107
V
SS
137
DQ14
167
NC
(TEST) 197 V
DD
227 DQ60
/RESET
Reset for register and DRAMs
18 DQ10 48 V
TT
78
V
DD
108 DQ56 138 DQ15 168 /RESET
198 /S3, NC 228 DQ61
PAR_IN
Parity bit for Addr/Ctrl
19 DQ11 49 V
TT
79
/S2,
NC
109
DQ57
139
V
SS
169
CKE1 199 V
SS
229 V
SS
/ERR_OUT
Error bit for Parity Error
20 V
SS
50
CKE0 80
V
SS
110
V
SS
140
DQ20
170
V
DD
200 DQ36
230 DQS16
A12/BC
Combination input: Addr12/Burst Chop
21 DQ16 51 V
DD
81 DQ32
111 /DQS7 141 DQ21 171 A15
201 DQ37
231 /DQS16
A10/AP
Combination input: Addr10/Auto-precharge
22 DQ17 52 BA2
82 DQ33 112 DQS7 142 V
SS
172
A14
202 V
SS
232 V
SS
V
SS
Ground
23 V
SS
53
/E
RR
_O
UT
83
V
SS
113
V
SS
143
DQS11
173
V
DD
203 DQS13
233 DQ62
V
DD
Power
24 /DQS2 54 V
DD
84
/DQS4
114
DQ58
144
/DQS11
174
A12/BC
204 /DQS13 234 DQ63
V
DDSPD
SPD EEPROM Power
25 DQS2 55 A11
85 DQS4 115 DQ59 145 V
SS
175
A9
205 V
SS
235 V
SS
V
REFDQ
Reference Voltage for DQ’s
26 V
SS
56
A7
86
V
SS
116
V
SS
146
DQ22
176
V
DD
206 DQ38
236 V
DDSPD
V
REFCA
Reference Voltage for CA
27 DQ18 57 V
DD
87
DQ34
117
SA0
147
DQ23
177
A8 207 DQ39
237 SA1 V
TT
Termination Voltage
28 DQ19 58 A5
88 DQ35 118 SCL
148 V
SS
178
A6
208 V
SS
238 SDA NC
No
Connection
29 V
SS
59
A4
89
V
SS
119
SA2
149
DQ28
179
V
DD
209 DQ44
239 V
SS
30 DQ24 60 V
DD
90
DQ40
120
V
TT
150
DQ29
180
A3
210 DQ45
240 V
TT
*
Not used
Identification
DTM64313H 512Mx72
4GB 2Rx4 PC3-10600R-9-10-E1
Performance range
Clock / Module Speed / CL-t
4GB 2Rx4 PC3-10600R-9-10-E1
Performance range
Clock / Module Speed / CL-t
RCD
-t
RP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6