Dataram DTM64328B ユーザーズマニュアル
DTM64328B
4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM
Document 06086, Revision A, 27-Oct-10, Dataram Corporation
© 2010
Page 1
Features
Description
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: 1.5V ± 0.075
I/O Type: SSTL_15
On-board I2C temperature sensor with integrated serial presence-detect
(SPD) EEPROM
(SPD) EEPROM
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 6, 7, 8 and 9
Bi-Directional Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 15/10/3
DTM64328B is a registered 512Mx72 memory
module, which conforms to JEDEC's DDR3,
PC3-10600 standard. The assembly is Dual-
Rank. Each Rank is comprised of nine 256Mx8
DDR3 Hynix SDRAMs. One 2K-bit EEPROM is
used for Serial Presence Detect and a
combination register/PLL, with Address and
Command Parity, is also used.
Both output driver strength and input termination
impedance are programmable to maintain signal
integrity on the I/O signals in a Fly-by topology.
A thermal sensor accurately monitors the DIMM
module and can prevent exceeding the maximum
operating temperature of 95C.
module, which conforms to JEDEC's DDR3,
PC3-10600 standard. The assembly is Dual-
Rank. Each Rank is comprised of nine 256Mx8
DDR3 Hynix SDRAMs. One 2K-bit EEPROM is
used for Serial Presence Detect and a
combination register/PLL, with Address and
Command Parity, is also used.
Both output driver strength and input termination
impedance are programmable to maintain signal
integrity on the I/O signals in a Fly-by topology.
A thermal sensor accurately monitors the DIMM
module and can prevent exceeding the maximum
operating temperature of 95C.
Fully RoHS Compliant
Pin Configuration
Pin Description
Front Side
Back Side
Name
Function
1 V
REFDQ
31
DQ25
61
A2
91
DQ41
121
V
SS
151 V
SS
181 A1 211 V
SS
CB[7:0]
Data Check Bits
2 V
SS
32
V
SS
62
V
DD
92
V
SS
122
DQ4 152 DM3
182 V
DD
212 DM5 DQ[63:0]
Data
Bits
3 DQ0
33 /DQS3
63 CK1*
93 /DQS5 123
DQ5
153 /TDQS12 183 V
DD
213 /TDQS14 DQS[8:0], /DQS[8:0] Differential Data Strobes
4 DQ1
34 DQS3
64 /CK1* 94 DQS5 124
V
SS
154 V
SS
184 CK0
214 V
SS
DM[8:0]
Data
Mask
5 V
SS
35
V
SS
65
V
DD
95
V
SS
125
DM0 155 DQ30 185 /CK0 215 DQ46 /TDQS[17:9]
Termination
Data
Strobe
6 /DQS0 36 DQ26
66 V
DD
96 DQ42 126
/TDQS9 156 DQ31
186 V
DD
216 DQ47
CK[1:0], /CK[1:0]
Differential Clock Inputs
7 DQS0
37 DQ27
67 V
REFCA
97
DQ43
127
V
SS
157 V
SS
187 /Event
217 V
SS
CKE[1:0]
Clock
Enables
8 V
SS
38
V
SS
68
P
AR
_I
N
98
V
SS
128 DQ6
158 CB4
188 A0
218 DQ52
/CAS
Column Address Strobe
9 DQ2
39 CB0
69 VDD
99 DQ48 129
DQ7
159 CB5
189 V
DD
219 DQ53
/RAS
Row Address Strobe
10 DQ3
40 CB1
70 A10/AP 100 DQ49 130 V
SS
160 V
SS
190 BA1
220 V
SS
/S[3:0]
Chip
Selects
11 V
SS
41
V
SS
71
BA0
101
V
SS
131
DQ12 161 DM8
191 V
DD
221 DM6 /WE
Write
Enable
12 DQ8
42 /DQS8
72 V
DD
102
/DQS6 132
DQ13
162 /TDQS17
192 /RAS
222 /TDQS15 A[15:0]
Address
Inputs
13 DQ9
43 DQS8
73 /WE
103 DQS6 133 V
SS
163 V
SS
193 /S0
223 V
SS
BA[2:0]
Bank
Addresses
14 V
SS
44
V
SS
74
/CAS
104
V
SS
134
DM1 164 CB6
194 V
DD
224 DQ54
ODT[1:0]
On Die Termination Inputs
15 /DQS1
45 CB2
75 V
DD
105
DQ50
135
/TDQS10 165 CB7 195 ODT0
225 DQ55
SA[2:0]
SPD
Address
16 DQS1
46 CB3
76 /S1
106 DQ51 136 V
SS
166 V
SS
196 A13
226 V
SS
SCL
SPD Clock Input
17 V
SS
47
V
SS
77
ODT1
107
V
SS
137
DQ14 167 NC
(TEST) 197 V
DD
227 DQ60
SDA
SPD Data Input/Output
18 DQ10
48 V
TT
78
V
DD
108 DQ56 138 DQ15
168 /RESET
198 /S3, NC* 228 DQ61
/EVENT
Temperature Sensing
19 DQ11
49 V
TT
79
/S2,
NC*
109
DQ57
139
V
SS
169 CKE1 199 V
SS
229 V
SS
/RESET
Reset for register and DRAMs
20 V
SS
50
CKE0 80
V
SS
110
V
SS
140
DQ20 170 V
DD
200 DQ36
230 DM7
PAR_IN
Parity bit for Addr/Ctrl
21 DQ16
51 V
DD
81 DQ32
111 /DQS7 141 DQ21
171 A15
201 DQ37
231 /TDQS16 /ERR_OUT
Error bit for Parity Error
22 DQ17
52 BA2
82 DQ33
112 DQS7 142 V
SS
172 A14 202 V
SS
232 V
SS
A12/BC
Combination input: Addr12/Burst Chop
23 V
SS
53
/E
RR
_O
UT
83
V
SS
113
V
SS
143
DM2 173 V
DD
203 DM4
233 DQ62
A10/AP
Combination input: Addr10/Auto-precharge
24 /DQS2
54 V
DD
84
/DQS4
114
DQ58
144
/TDQS11 174 A12/BC
204 /TDQS13 234 DQ63
V
SS
Ground
25 DQS2
55 A11
85 DQS4
115 DQ59 145 V
SS
175 A9
205 V
SS
235 V
SS
V
DD
Power
26 V
SS
56
A7
86
V
SS
116
V
SS
146
DQ22 176 V
DD
206 DQ38
236 V
DDSPD
V
DDSPD
SPD EEPROM Power
27 DQ18
57 V
DD
87
DQ34 117
SA0 147
DQ23 177 A8
207 DQ39 237 SA1
V
REFDQ
Reference Voltage for DQ’s
28 DQ19
58 A5
88 DQ35
118 SCL 148 V
SS
178 A6
208 V
SS
238 SDA V
REFCA
Reference Voltage for CA
29 V
SS
59
A4
89
V
SS
119
SA2
149
DQ28
179 V
DD
209 DQ44
239 V
SS
V
TT
Termination Voltage
30 DQ24
60 V
DD
90
DQ40
120
V
T
150
DQ29 180 A3
210 DQ45 240 V
TT
NC
No
Connection
* =
Not used
Identification
DTM64328B 512Mx72
4GB 2Rx8 PC3-10600R-9-10-B0
Performance range
Clock / Module Speed / CL-t
4GB 2Rx8 PC3-10600R-9-10-B0
Performance range
Clock / Module Speed / CL-t
RCD
-t
RP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6