Texas Instruments TPS61050-215 Evaluation Kit TPS61050EVM-215 TPS61050EVM-215 TPS61050EVM-215 データシート
製品コード
TPS61050EVM-215
www.ti.com
ELECTRICAL CHARACTERISTICS
SLUS525 – MARCH 2007
Unless otherwise noted the specification applies for V
IN
= 3.6 V over an operating junction temp. of –40
°
C
≤
T
J
≤
125
°
C.
Typical values are for T
A
= 25
°
C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
Input voltage range
2.5
6.0
V
V
IN
Minimum input voltage for start-up
MODE_CTRL[1:0] = 11, OV[1:0] = 01, R
L
= 10
Ω
2.5
V
I
Q
Operating quiescent current into AVIN
MODE_CTRL[1:0] = 01, I
LED
= 0 mA
8.5
mA
MODE_CTRL[1:0] = 00, OV[1:0]
≠
11
0.3
3.0
µ
A
– 40
°
C
≤
T
J
≤
85
°
C
I
SD
Shutdown current into AVIN
MODE_CTRL[1:0] = 00, OV[1:0] = 11
140
µ
A
– 40
°
C
≤
T
J
≤
85
°
C
V
UVLO
Undervoltage lockout threshold
V
IN
falling
2.3
2.4
V
OUTPUT
Current regulator mode
V
IN
5.5
V
OUT
Output voltage range
V
Voltage regulator mode
4.5
5.25
OVP Output overvoltage protection
V
OUT
rising
5.7
6.0
6.25
V
OVP
Output overvoltage protection hysterisis
0.15
V
D
Minimum duty cycle
7.5%
0.25 V
≤
V
LED
≤
2.0 V,
–15%
15%
50 mA
≤
I
LED
≤
250 mA, T
J
= 50
°
C
LED current accuracy
(1)
0.25 V
≤
V
LED
≤
2.0 V,
–12%
12%
200 mA
≤
I
LED
≤
1200 mA, T
J
= 50
°
C
LED current temperature coefficient
0.08
%/
°
C
DC output voltage accuracy
2.5 V
≤
V
IN
≤
0.9 V
OUT
, PWM operation
–3%
3%
V
LED
LED sense voltage
I
LED
= 1200 mA
250
mV
LED input leakage current
V
LED
= V
OUT
= 5 V, –40
°
C
≤
T
J
≤
85
°
C
0.1
1
µ
A
POWER SWITCH
Switch MOSFET on-resistance
80
r
DS(on)
V
OUT
= V
GS
= 3.6 V
m
Ω
Rectifier MOSFET on-resistance
80
Switch MOSFET leakage
0.1
1
I
lkg(SW)
V
DS
= 6.0 V, –40
°
C
≤
T
J
≤
85
°
C
µ
A
Rectifier MOSFET leakage
0.1
1
2.5 V
≤
V
IN
≤
6.0 V, ILIM bits = 00
850
1000
1150
1275
1500
1725
I
lim
Switch current limit
2.5 V
≤
V
IN
≤
6.0 V, ILIM bits = 01, 10
(1)
mA
1700
2000
2300
2.5 V
≤
V
IN
≤
6.0 V, ILIM bits = 11
(1)
140
160
°
C
Thermal shutdown
(1)
20
°
C
Thermal shutdown hysteresis
(1)
OSCILLATOR
f
SW
Oscillator frequency
1.8
2.0
2.2
MHz
ADC
Resolution
3
Bits
V
LED
= 0.25 V, assured monotonic by design
±
0.25
±
1
LSB
Total error
(1)
SDA, SCL, GPIO, ENVM, FLASH_SYNC
V
(IH)
High-level input voltage
1.2
V
V
(IL)
Low-level input voltage
0.4
V
Low-level output voltage (SDA)
I
OL
= 8 mA
0.3
V
(OL)
V
Low-level output voltage (GPIO)
DIR = 1, I
OL
= 8 mA
0.3
I
(LKG)
Logic input leakage current
Input connected to V
IN
or GND, –40
°
C
≤
T
J
≤
85
°
C
0.01
0.1
µ
A
GPIO pull-down resistance
DIR = 0, GPIO
≤
0.4 V (TPS61050)
400
k
Ω
ENVM pull-down resitance
ENVM
≤
0.4 V (TPS61052)
400
k
Ω
FLASH_SYNC pull-down resistance
FLASH_SYNC
≤
0.4 V
400
k
Ω
(1)
Assured by design. Not tested in production.
3