Microchip Technology ARD00330 データシート
PIC18F87J72 FAMILY
DS39979A-page 402
Preliminary
2010 Microchip Technology Inc.
TABLE 29-1:
MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
Operating temperature -40°C
T
A
+85°C for industrial
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Program Flash Memory
D130
E
P
Cell Endurance
10K
—
—
E/W -40
C to +85C
D131
V
PR
V
DD
for Read
V
MIN
—
3.6
V
V
MIN
= Minimum operating
voltage
D132B V
PEW
Voltage for Self-Timed Erase or
Write operations
V
Write operations
V
DD
V
DDCORE
2.35
2.25
2.25
—
—
—
3.6
2.7
2.7
V
V
V
ENVREG tied to V
DD
ENVREG tied to V
SS
D133A T
IW
Self-Timed Write Cycle Time
—
2.8
—
ms
D133B T
IE
Self-Timed Block Erased Cycle
Time
Time
—
33
—
ms
D134
T
RETD
Characteristic Retention
20
—
—
Year Provided no other
specifications are violated
D135
I
DDP
Supply Current during
Programming
Programming
—
3
14
mA
D140
T
WE
Writes per Erase Cycle
—
—
1
For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.