Atmel ARM-Based Evaluation Kit AT91SAM9N12-EK AT91SAM9N12-EK データシート
製品コード
AT91SAM9N12-EK
425
SAM9N12/SAM9CN11/SAM9CN12 [DATASHEET]
11063K–ATARM–05-Nov-13
Figure 31-6. Burst Write Access, Row Closed, DDR2-SDRAM Device
Figure 31-7. Burst Write Access, Row Closed, SDR-SDRAM Device
A write command can be followed by a read command. To avoid breaking the current write burst, Twtr/Twrd (bl/2 + 2 = 6
cycles) should be met. See
cycles) should be met. See
Trp = 2
Trcd = 2
SDCLK
Row a
col a
A[12:0]
NOP
PRCHG
NOP
ACT
NOP
WRITE
NOP
COMMAND
0
BA[1:0]
DQS[1:0]
Da
Db
Dc
Dd
De
Df
Dg
Dh
D [15:0]
3
0
3
DM[1:0]
Row a
Col a
NOP
PRCHG
NOP
ACT
NOP
WRITE
NOP
0
Da Db
Dc Dd
De Df
Dg Dhs
F
0
F
Trp
Trcd
BST
NOP
SDCLK
A[12:0]
COMMAND
BA[1:0]
D[31:0]
DM[3:0]