Atmel SAM4S-XPLD Atmel ATSAM4S-XPLD ATSAM4S-XPLD データシート
製品コード
ATSAM4S-XPLD
1089
SAM4S [DATASHEET]
11100E–ATARM–24-Jul-13
Figure 43-32.Two-wire Serial Bus Timing
43.11.9 Embedded Flash Characteristics
The maximum operating frequency given in
is limited by the embedded Flash access time when the processor is
fetching code out of it.
gives the device maximum operating frequency depending on the field FWS of the MC_FMR
register. This field defines the number of wait states required to access the embedded Flash memory.
The embedded Flash is fully tested during production test. The Flash contents are not set to a known state prior to shipment.
Therefore, the Flash contents should be erased prior to programming an application.
Therefore, the Flash contents should be erased prior to programming an application.
Note:
1.
Only the read operation is characterized between -40 and +105
°C
.
The others are characterized between -40 and +85
°C
.
Table 43-57. Embedded Flash Wait State
FWS
Read Operations
Maximum Operating Frequency (MHz)
@105°C
VDDCORE Set at
1.08V and VDDIO
1.62V to 3.6V
VDDCORE Set at
1.08V and VDDIO
2.7V to 3.6V
VDDCORE Set at
1.2V and VDDIO
1.62V to 3.6V
VDDCORE Set at
1.2V and VDDIO
2.7V to 3.6V
0
1 cycle
16
20
17
17
1
2 cycles
33
40
34
34
2
3 cycles
50
60
52
52
3
4 cycles
67
80
69
69
4
5 cycles
84
100
87
87
5
6 cycles
100
—
104
104
t
SU;STA
t
LOW
t
HIGH
t
LOW
t
of
t
HD;STA
t
HD;DAT
t
SU;DAT
t
SU;STO
t
BUF
TWCK
TWD
t
r
Table 43-58. AC Flash Characteristics
Parameter
Conditions
Min
Typ
Max
Units
Program Cycle Time
Erase Page Mode
—
10
50
ms
Erase Block Mode (by 4 Kbyte)
—
50
200
ms
Erase Sector Mode
—
400
950
ms
Full Chip Erase
1 MByte
512 KByte
512 KByte
—
9
5.5
18
11
11
s
Data Retention
Not Powered or Powered
—
20
—
years
Endurance
Write/Erase cycles per page, block or
sector @ 85°C
sector @ 85°C
10k
—
—
cycles