On Semiconductor NCL30000 Evaluation Board NCL30000LED1GEVB NCL30000LED1GEVB データシート
製品コード
NCL30000LED1GEVB
NCL30000
http://onsemi.com
6
(Continued)
V
MFP
= 2.4 V, V
Control
= 4 V, Ct = 1 nF, V
CS
= 0 V, V
ZCD
= 0 V, C
DRV
= 1 nF, V
CC
= 12 V, unless otherwise specified
(For typical values, T
J
= 25C. For min/max values, T
J
= −40C to 125C, unless otherwise specified)
Characteristic
Unit
Max
Typ
Min
Symbol
Test Conditions
RAMP CONTROL
Ct Peak Voltage
V
COMP
= open
V
Ct(MAX)
4.775
4.93
5.025
V
On Time Capacitor Charge Current
V
COMP
= open
V
Ct
= 0 V to V
Ct(MAX)
I
charge
235
275
297
mA
Ct Capacitor Discharge Duration
V
COMP
= open
V
Ct
= V
Ct(MAX)
−100 mV to 500 mV
t
Ct(discharge)
−
50
150
ns
PWM Propagation Delay
dV/dt = 30 V/ms
V
Ct
= V
Control
− Ct
(offset)
to V
DRV
= 10%
t
PWM
−
130
220
ns
ZERO CURRENT DETECTION
ZCD Arming Threshold
V
ZCD
= Increasing
V
ZCD(ARM)
1.25
1.4
1.55
V
ZCD Triggering Threshold
V
ZCD
= Decreasing
V
ZCD(TRIG)
0.6
0.7
0.83
V
ZCD Hysteresis
V
ZCD(HYS)
500
700
900
mV
ZCD Bias Current
V
ZCD
= 5 V
I
ZCD
− 2
−
+ 2
mA
Positive Clamp Voltage
I
ZCD
= 3 mA
V
CL(POS)
9.8
10
12
V
Negative Clamp Voltage
I
ZCD
= −2 mA
V
CL(NEG)
−0.9
−0.7
−0.5
V
ZCD Propagation Delay
V
ZCD
= 2 V to 0 V ramp,
dV/dt = 20 V/ms
V
ZCD
= V
ZCD(TRIG)
to V
DRV
= 90%
t
ZCD
−
100
170
ns
Minimum ZCD Pulse Width
t
SYNC
−
70
−
ns
Maximum Off Time in Absence of ZCD
Transition
Falling V
DRV
= 10% to
Rising V
DRV
= 90%
t
start
75
165
300
ms
DRIVE
Drive Resistance
I
source
= 100 mA
I
sink
= 100 mA
R
OH
R
OL
−
−
−
12
6
20
13
13
W
Rise Time
10% to 90%
t
rise
−
35
80
ns
Fall Time
90% to 10%
t
fall
−
25
70
ns
Drive Low Voltage
V
CC
= V
CC(on)
−200 mV,
I
sink
= 10 mA
V
out(start)
−
−
0.2
V
CURRENT SENSE
Current Sense Voltage Threshold
V
ILIM
0.45
0.5
0.55
V
Leading Edge Blanking Duration
V
CS
= 2 V, V
DRV
= 90% to 10%
t
LEB
100
195
350
ns
Overcurrent Detection Propagation
Delay
dV/dt = 10 V/ms
V
CS
= V
ILIM
to V
DRV
= 10%
t
CS
40
100
170
ns
Current Sense Bias Current
V
CS
= 2 V
I
CS
−1
−
1
mA