On Semiconductor NCL30160 Evaluation Board NCL30160GEVB NCL30160GEVB データシート

VIN to GND

VIN

−0.3

40

V

MOSFET Drain Voltage to GND

LX

−

40

V

VCC to GND

VCC

−

6

V

DIM/EN to GND

DIM

−0.3

6

V

CS to GND

CS

−0.3

6

V

ROT to GND

ROT

−0.3

6

V

Absolute Maximum Junction Temperature

T

J

(MAX)

150

°C

Operating Junction Temperature Range

T

J

−40

125

°C

Maximum LED Drive Current

ILIM

1.5

A

Storage Temperature Range

T

stg

−55 to +125

°C

Thermal Characteristics

SOIC−8 Plastic Package

Maximum Power Dissipation @ T

A

 = 25°C (Note 1)

Thermal Resistance Junction−to−Air (Note 2)

PD

R

qJA

1.11

111.7

W

°C/W

Lead Temperature Soldering (10 sec): 

Re−flow (SMD styles only) 

Pb−Free (Note 3)

T

L

260 peak

°C

MSL

1

−

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The maximum package power dissipation limit must not be exceeded.

P

D

+

T

J(max)

* T

A

R

qJA

2. When mounted on a multi−layer board with 35 mm

2

 copper area, using 1 oz Cu.

3. 60−180 seconds minimum above 237°C.

4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.