STMicroelectronics LED815 Evaluation Boards EVALHVLED815W15 EVALHVLED815W15 データシート
製品コード
EVALHVLED815W15
HVLED815PF
Pin description and connection diagrams
Doc ID 023409 Rev 4
7/36
2
Pin description and connection diagrams
Figure 4.
Pin connection (top view)
2.1 Pin
description
N.A.
N.A.
N.A.
SOURCE
DRAIN
CS
GND
ILED
DMG
COMP
VCC
DRAIN
DRAIN
DRAIN
N.A.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
N.C.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DRAIN
DRAIN
DRAIN
DRAIN
AM13210v1
Table 2.
Pin description
N.
Name
Function
1
SOURCE
Source connection of the internal power section.
2
CS
Current sense input.
Connect this pin to the SOURCE pin (through an R1 resistor) to sense the
current flowing in the MOSFET through an R
current flowing in the MOSFET through an R
SENSE
resistor connected to GND.
The CS pin is also connected through dedicated ROS, RPF resistors to the input
and auxiliary voltage, in order to modulate the input current flowing in the
MOSFET according to the input voltage and therefore achieving a high power
factor. See dedicated section for more details.
and auxiliary voltage, in order to modulate the input current flowing in the
MOSFET according to the input voltage and therefore achieving a high power
factor. See dedicated section for more details.
The resulting voltage is compared with the voltage on the ILED pin to determine
MOSFET turn-off. The pin is equipped with 250 ns blanking time after the gate-
drive output goes high for improved noise immunity. If a second comparison level
located at 1 V is exceeded, the IC is stopped and restarted after V
MOSFET turn-off. The pin is equipped with 250 ns blanking time after the gate-
drive output goes high for improved noise immunity. If a second comparison level
located at 1 V is exceeded, the IC is stopped and restarted after V
CC
has
dropped below 5 V.