Rohm Semiconductor EMD2T2R Bipolar Transistor Emitter reverse voltage U(CEO) 50 V EMD2T2R データシート
製品コード
EMD2T2R
EMD2 / UMD2N / IMD2A
Transistors
Rev.C 1/3
General purpose
(dual digital transistors)
(dual digital transistors)
EMD2 / UMD2N / IMD2A
zFeatures
zDimensions (Unit : mm)
1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT6 or UMT6 or SMT6
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
−” sign on DTr
2
values for the PNP
type have been omitted.
zEquivalent circuit
zEquivalent circuit
EMD2 / UMD2N
IMD2A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
2
R
1
R
2
=22k
Ω
R
1
=22k
Ω
R
2
=22k
Ω
R
1
=22k
Ω
zAbsolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
40
V
V
IN
−
10
I
O
30
mA
I
C (Max.)
100
Tj
150
˚C
Tstg
−
55 to
+
150
˚C
Pd
EMD2, UMD2N
150 (TOTAL)
mW
IMD2A
300 (TOTAL)
∗
1
∗
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
ROHM : EMT6
EMD2
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
UMD2N
(6) (5) (4)
(1) (2) (3)
(6) (5) (4)
(1) (2) (3)
(4)
(5)
(6)
(3)
(2)
(1)
Abbreviated symbol : D2
Abbreviated symbol : D2
Abbreviated symbol : D2
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
IMD2A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions