On Semiconductor N/A MJ 11016 NPN Case type TO 3 I(C) 30 A MJ11016G データシート
製品コード
MJ11016G
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
3
30 k
0.3
Figure 2. DC Current Gain (1)
I
C
, COLLECTOR CURRENT (AMP)
0.5 0.7
1
2
3
10
20
30
7 k
3 k
2 k
2 k
700
Figure 3. Small−Signal Current Gain
h
FE
, SMALL-SIGNAL
CURRENT
GAIN (NORMALIZE
D
2
10
f, FREQUENCY (kHz)
20
30
50
70
200 300
500
1.0 k
0.2
0.05
0.02
0.01
10 k
5 k
h
FE
, DC CURRENT
GAIN
V
CE
= 5 Vdc
T
J
= 25
°C
500
300
5
7
100
5
0.1
Figure 4. “On” Voltages (1)
I
C
, COLLECTOR CURRENT (AMP)
100
0
V
BE(sat)
Figure 5. Active Region DC Safe Operating Area
20 k
PNP MJ11015
NPN MJ11012, MJ11016
NPN MJ11012, MJ11016
V
, VOL
TAGE (VOL
TS)
4
3
2
1
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
5
10
20
200
10
5
0.01
20
I C
, COLLECT
OR CURRENT
(AMP)
2
1
0.2
0.1
0.5
0.05
0.02
50
T
J
= 25
°C
I
C
/I
B
= 100
V
CE
= 3 Vdc
I
C
= 10 mAdc
T
J
= 25
°C
0.1
0.5
1
0.005
700
MJ11012
MJ11015, MJ11016
2
7
30
70
100
2
20
50
0.2
0.5
1
10
5
V
CE(sat)
PNP MJ11015
NPN MJ11012, MJ11016
NPN MJ11012, MJ11016
PNP MJ11015
NPN MJ11012, MJ11016
NPN MJ11012, MJ11016
BONDING WIRE LIMITATION
THERMAL LIMITATION @ T
THERMAL LIMITATION @ T
C
= 25
°C
SECOND BREAKDOWN LIMITATION
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
limitations imposed by secondary breakdown.