Infineon Technologies N/A BFR 93 AW NPN Case type SOT 323 I( BFR93AW データシート
製品コード
BFR93AW
2010-08-09
1
BFR93AW
1
2
3
NPN Silicon RF Transistor
•
For low distortion amplifiers and
oscillators up to 2 GHz at collector currents from
5 mA to 30 mA
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR93AW
R2s
1=B
2=E
3=C
SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
90
mA
Base current
I
B
9
Total power dissipation
1)
T
S
≤
104 °C
P
tot
300
mW
Junction temperature
T
J
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
Stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
≤
155
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note AN077 Thermal Resistance