Infineon Technologies N/A BFR 181 W NPN Case type SOT 323 I( BFR181W データシート
製品コード
BFR181W
2010-10-08
1
BFR181W
1
2
3
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
collector currents from 0.5 mA to 12 mA
• f
T
= 8 GHz, NF
min
= 0.9 dB at 900 MHz
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR181W
RFs
1=B
2=E
3=C
SOT323
Maximum Ratings
at T
A
= 25 °C
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
20
mA
Base current
I
B
2
Total power dissipation
1)
T
S
≤ 90 °C
P
tot
175
mW
Junction temperature
T
J
150
°C
Storage temperature
T
Stg
-65 ... 150
Thermal Resistance
Parameter
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
≤ 345
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note AN077 Thermal Resistance