Korea Electronics N/A Emitter reverse voltag BC327-25 データシート
製品コード
BC327-25
2008. 4. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC327
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : I
C
=-800mA.
DC Current Gain : h
FE
=100
630 (V
CE
=-1V, I
c
=-100mA).
For Complementary with NPN type BC337.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-45V, I
E
=0
-
-
-100
nA
DC Current Gain (Note)
h
FE
V
CE
=-1V, I
C
=-100mA
100
-
630
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-0.7
V
Base-Emitter Voltage
V
BE(ON)
V
CE
=-1V, I
C
=-300mA
-
-
-1.2
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-10mA, f=100MHz
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
16
-
pF
Note : h
FE
Classification none:100
630, 16:100
250, 25:160
400, 40:250
630
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-800
mA
Base Current
I
B
-200
mA
Emitter Current
I
E
800
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150