Infineon Technologies N/A BFN 27 PNP Case type SOT 23 I(C) 0 BFN27 データシート

製品コード
BFN27
ページ / 7
2011-12-19
1
BFN27
1
2
3
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
   and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN26 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BFN27
FLs
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
300
V
Collector-base voltage
V
CBO
300
Emitter-base voltage
V
EBO
5
Collector current
I
C
200
mA
Peak collector current, t
p
 
≤ 10 ms
I
CM
500
Base current
I
B
100
Peak base current
I
BM
200
Total power dissipation- 
T
S
 
≤ 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
≤ 210
K/W
1
For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)