Rohm Semiconductor EMB11T2R Bipolar Transistor Emitter reverse voltage U(CEO) -50 V EMB11T2R データシート
製品コード
EMB11T2R
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
EMB11 / UMB11N / IMB11A
PNP -100mA -50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
lOutline
lFeatures
1) Built-In Biasing Resistors, R
1) Built-In Biasing Resistors, R
1
= R
2
= 10k
W
.
2) Two DTA114E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
lInner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
R
1
10k
W
R
2
10k
W
Parameter
Tr1 and Tr2
V
CC
-
50V
I
C(MAX.)
-
100mA
Part No.
Package
Package
size
(mm)
Taping
code
8,000
B11
8
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMB11
EMT6
1616
T2R
180
3,000
B11
IMB11A
3,000
B11
UMB11N
UMT6
2021
TR
180
8
SMT6
2928
T108
180
8
EMT6
UMT6
SMT6
EMB11
(SC-107C)
IMB11A
SOT-457 (SC-74)
UMB11N
SOT-353 (SC-88)
EMB11 / UMB11N
IMB11A
OUT
(6)
(2)
IN
(1)
GND
(3)
OUT
IN
(5)
GND
(4)
OUT
(4)
(2)
IN
(3)
GND
(1)
OUT
IN
(5)
GND
(6)
(6)
(5)
(4)
(5)
(4)
(1)
(2)
(3)
(2)
(3)
(4)
(5)
(6)
(5)
(6)
(3)
(2)
(1)
(2)
(1)
(6)
(5)
(4)
(5)
(4)
(1)
(2)
(3)
(2)
(3)
1/7
2012.06 - Rev.B