Fairchild Semiconductor N/A MMBT5401 データシート
製品コード
MMBT5401
©2004 Fairchild Semiconductor Corporation
Rev. B1, August 2004
MMBT5401
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
-150
V
V
CBO
Collector-Base Voltage
-160
V
V
EBO
Emitter-Base Voltage
-5.0
V
I
C
Collector Current
- Continuous
-600
mA
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage *
I
C
= -1.0mA, I
B
= 0
-150
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
µ
A, I
E
= 0
-160
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
µ
A, I
C
= 0
-5.0
V
I
CBO
Collector Cutoff Current
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100
°
C
-50
-50
-50
nA
µ
A
I
EBO
Emitter Cutoff Current
V
EB
= -3.0V, I
C
=0
-50
nA
On Characteristics *
h
FE
DC Current Gain
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
50
60
50
60
50
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
-0.2
-0.5
-0.5
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
-1.0
-1.0
-1.0
V
V
V
Small Signal Characterics
f
T
Current Gain Bandwidth Product
I
C
= -10mA, V
CE
= -10V,
f = 100MHz
100
300
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1MHz
6.0
pF
N
F
Noise Figure
I
C
= -250
µ
A, V
CE
= -5.0V, R
S
= 1.0K
Ω
f = 10Hz to 15.7KHz
8.0
dB
MMBT5401
PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
SOT-23
B
E
C
Mark: 2L